IPW60R041C6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

Pulsed Drain Current-Max (IDM) :

272A

Published :

2008

Number of Elements :

1

Avalanche Energy Rating (Eas) :

1954 mJ

Input Capacitance (Ciss) (Max) @ Vds :

6530pF @ 10V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

77.5A Tc

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

600V

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

481W Tc

Series :

CoolMOS™

Rds On (Max) @ Id, Vgs :

41m Ω @ 44.4A, 10V

Surface Mount :

No

Package / Case :

TO-247-3

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

Mounting Type :

Through Hole

Drain-source On Resistance-Max :

0.041Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3.5V @ 2.96mA

JESD-609 Code :

e3

FET Type :

N-Channel

Packaging :

Tube

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

ECCN Code :

EAR99