IPW60R031CFD7

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height :

25.4mm

Vgs(th) (Max) @ Id :

4.5V @ 1.63mA

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

650V

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

278W Tc

Published :

2014

Surface Mount :

No

JESD-30 Code :

R-PSFM-T3

Vgs (Max) :

±20V

Number of Channels :

1

FET Type :

N-Channel

Number of Elements :

1

Avalanche Energy Rating (Eas) :

326 mJ

Packaging :

Tube

Turn-Off Delay Time :

175 ns

Turn On Delay Time :

48 ns

JESD-609 Code :

e3

Factory Lead Time :

18 Weeks

Number of Terminations :

3

Max Junction Temperature (Tj) :

150°C

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

277A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

CoolMOS™ CFD7

Package / Case :

TO-247-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

141nC @ 10V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

63A

Drain to Source Breakdown Voltage :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

5623pF @ 400V

Rds On (Max) @ Id, Vgs :

31m Ω @ 32.6A, 10V

Current - Continuous Drain (Id) @ 25°C :

63A Tc

Mounting Type :

Through Hole

Power Dissipation :

278W