IPW60R031CFD7

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Surface Mount :

No

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

63A

Drain to Source Voltage (Vdss) :

650V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4.5V @ 1.63mA

Max Junction Temperature (Tj) :

150°C

Gate Charge (Qg) (Max) @ Vgs :

141nC @ 10V

Rds On (Max) @ Id, Vgs :

31m Ω @ 32.6A, 10V

Pulsed Drain Current-Max (IDM) :

277A

Number of Channels :

1

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Published :

2014

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

326 mJ

ECCN Code :

EAR99

FET Type :

N-Channel

Factory Lead Time :

18 Weeks

Drain to Source Breakdown Voltage :

600V

Current - Continuous Drain (Id) @ 25°C :

63A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

CoolMOS™ CFD7

Turn On Delay Time :

48 ns

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

5623pF @ 400V

Number of Terminations :

3

Power Dissipation :

278W

Height :

25.4mm

Vgs (Max) :

±20V

Packaging :

Tube

Turn-Off Delay Time :

175 ns

Power Dissipation-Max :

278W Tc

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-247-3