IPW60R045CPFKSA1
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- Mfr.Part #
- IPW60R045CPFKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 60A TO247-3
- Stock
- 4,461
- In Stock ：
- 4,461
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 30 ns
- Rise Time :
- 20ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Threshold Voltage :
- 2.5V
- Drain-source On Resistance-Max :
- 0.045Ohm
- Continuous Drain Current (ID) :
- 60A
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Series :
- CoolMOS™
- Current Rating :
- 60A
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 600V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 431W
- Height :
- 25.549mm
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-247-3
- Pin Count :
- 3
- Mount :
- Through Hole
- Power Dissipation-Max :
- 431W Tc
- Vgs(th) (Max) @ Id :
- 3.5V @ 3mA
- Factory Lead Time :
- 49 Weeks
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 650V
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Max Dual Supply Voltage :
- 600V
- Drain to Source Breakdown Voltage :
- 600V
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 44A, 10V
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 6800pF @ 100V
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 100 ns
- Fall Time (Typ) :
- 10 ns
- JESD-609 Code :
- e3
- Datasheets
- IPW60R045CPFKSA1
N-Channel Tube 45m Ω @ 44A, 10V ±20V 6800pF @ 100V 190nC @ 10V 650V TO-247-3
IPW60R045CPFKSA1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6800pF @ 100V.This device has a continuous drain current (ID) of [60A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 100 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 600V.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2.5V.In order to operate this transistor, a voltage of 650V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IPW60R045CPFKSA1 Features
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 100 ns
a threshold voltage of 2.5V
a 650V drain to source voltage (Vdss)
IPW60R045CPFKSA1 Applications
There are a lot of Infineon Technologies
IPW60R045CPFKSA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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