IPW65R310CFD

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

11 ns

Lead Free :

Lead Free

Terminal Finish :

Tin (Sn)

Published :

2008

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V

Turn-Off Delay Time :

45 ns

Terminal Position :

Single

Power Dissipation-Max :

104.2W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Mount :

Through Hole

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

11.4A Tc

Fall Time (Typ) :

7 ns

Rds On (Max) @ Id, Vgs :

310m Ω @ 4.4A, 10V

Continuous Drain Current (ID) :

11.4A

Vgs(th) (Max) @ Id :

4.5V @ 440μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

650V

Rise Time :

7.5ns

Package / Case :

TO-247-3

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Avalanche Energy Rating (Eas) :

290 mJ

Series :

CoolMOS™

RoHS Status :

RoHS Compliant