IPW65R280E6FKSA1
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- Mfr.Part #
- IPW65R280E6FKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 13.8A TO247-3
- Stock
- 17,411
- In Stock ：
- 17,411
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 3.5V @ 440µA
- JESD-30 Code :
- R-PSFM-T3
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 104W Tc
- Drain-source On Resistance-Max :
- 0.28Ohm
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Mount :
- Through Hole
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 39A
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- RoHS Compliant
- Rise Time :
- 9ns
- Max Dual Supply Voltage :
- 650V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 104W
- Factory Lead Time :
- 12 Weeks
- Series :
- CoolMOS™
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 100V
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-247-3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 4.4A, 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Continuous Drain Current (ID) :
- 13.8A
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 76 ns
- Turn On Delay Time :
- 11 ns
- Current - Continuous Drain (Id) @ 25°C :
- 13.8A Tc
- Terminal Position :
- Single
- Datasheets
- IPW65R280E6FKSA1
N-Channel Tube 280m Ω @ 4.4A, 10V ±20V 950pF @ 100V 45nC @ 10V TO-247-3
IPW65R280E6FKSA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 290 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 950pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 13.8A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 76 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 39A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 650V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPW65R280E6FKSA1 Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 13.8A
the turn-off delay time is 76 ns
based on its rated peak drain current 39A.
IPW65R280E6FKSA1 Applications
There are a lot of Infineon Technologies
IPW65R280E6FKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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