IPW65R190E6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-247-3

Minimum Operating Temperature :

- 55 C

Technology :

Si

Transistor Polarity :

N-Channel

Rad Hardened :

No

Number of Elements :

1

Mounting Style :

Through Hole

Mounting Type :

Through Hole

Product Type :

MOSFET

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.3A, 10V

Gate Charge (Qg) (Max) @ Vgs :

73 nC @ 10 V

Rise Time :

12 ns

Manufacturer :

Infineon

Operating Temperature Classification :

Military

Power Dissipation (Max) :

151W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

1620 pF @ 100 V

Transistor Type :

1 N-Channel

Subcategory :

MOSFETs

Brand :

Infineon Technologies

FET Feature :

-

Channel Type :

N

Product Category :

MOSFET

RoHS :

Details

Configuration :

Single

Drive Voltage (Max Rds On, Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

20.2A (Tc)

Vgs(th) (Max) @ Id :

3.5V @ 730µA

Package :

Bulk

Polarity :

N

Width :

5.21 mm

Drain-Source On-Volt :

700(V)

Height :

21.1 mm

Channel Mode :

Enhancement

Operating Temperature :

-55°C ~ 150°C (TJ)

Package Type :

TO-247

Maximum Operating Temperature :

+ 150 C

Continuous Drain Current Id :

20.2

Power Dissipation :

151

Gate-Source Voltage (Max) :

20(V)

Pin Count :

3 +Tab

Length :

16.13 mm

Mounting :

Through Hole

Drain to Source Voltage (Vdss) :

650 V

Number of Channels :

1 Channel

Operating Temp Range :

-55C to 150C

Packaging :

Rail/Tube

Series :

CoolMOS E6

Supplier Device Package :

PG-TO247-3-41

Vgs (Max) :

±20V

Product Status :

Active

FET Type :

N-Channel

Type :

Power MOSFET

Tradename :

CoolMOS

Continuous Drain Current :

20.2(A)