IPW65R190C6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C ~ 150°C (TJ)

Rise Time :

12 ns

Subcategory :

MOSFETs

Lifecycle Status :

Obsolete (Last Updated: 2 years ago)

Vgs(th) (Max) @ Id :

3.5V @ 730µA

Gate Charge (Qg) (Max) @ Vgs :

73 nC @ 10 V

Package :

Bulk

Length :

16.13 mm

Minimum Operating Temperature :

- 55 C

Gate to Source Voltage (Vgs) :

20 V

Transistor Polarity :

N-Channel

Transistor Type :

1 N-Channel

On-State Resistance :

190 mΩ

Package / Case :

TO-247-3

Turn-Off Delay Time :

133 ns

Number of Pins :

3

FET Feature :

-

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

20.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Configuration :

Single

Maximum Operating Temperature :

+ 150 C

Power Dissipation :

151 W

Brand :

Infineon Technologies

Supplier Device Package :

PG-TO247-3-41

Product Status :

Active

Vgs (Max) :

±20V

Product Type :

MOSFET

Max Power Dissipation :

151 W

Channel Mode :

Enhancement

Turn-On Delay Time :

13 ns

Width :

5.21 mm

Rds On Max :

190 mΩ

Product Category :

MOSFET

Tradename :

CoolMOS

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.3A, 10V

Series :

CoolMOS C6

Continuous Drain Current (ID) :

20.2 A

Drain to Source Voltage (Vdss) :

650 V

Drain to Source Resistance :

190 mΩ

Mounting Type :

Through Hole

Manufacturer :

Infineon

Input Capacitance (Ciss) (Max) @ Vds :

1620 pF @ 100 V

Mounting Style :

Through Hole

RoHS :

Details

Min Operating Temperature :

-55 °C

Element Configuration :

Single

Input Capacitance :

1.62 nF

Packaging :

Tube

Technology :

Si

Drain to Source Breakdown Voltage :

700 V

Package Quantity :

240

Max Operating Temperature :

150 °C

Height :

21.1 mm

Power Dissipation (Max) :

151W (Tc)