IPW65R150CFDFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Pbfree Code :

yes

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Element Configuration :

Single

Drain to Source Breakdown Voltage :

700V

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

150m Ω @ 9.3A, 10V

Current - Continuous Drain (Id) @ 25°C :

22.4A Tc

Package / Case :

TO-247-3

Pulsed Drain Current-Max (IDM) :

72A

Turn-Off Delay Time :

52.8 ns

Lead Free :

Lead Free

Factory Lead Time :

18 Weeks

Fall Time (Typ) :

5.6 ns

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Dual Supply Voltage :

650V

Power Dissipation-Max :

195.3W Tc

Terminal Finish :

Tin (Sn)

Rise Time :

7.6ns

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Series :

CoolMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

22.4A

Published :

2011

Power Dissipation :

195.3W

Turn On Delay Time :

12.4 ns

Number of Elements :

1

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4.5V @ 900μA

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

2340pF @ 100V

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED