IPW65R080CFDFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

43.3A

Vgs(th) (Max) @ Id :

4.5V @ 1.76mA

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

700V

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

43.3A Tc

Avalanche Energy Rating (Eas) :

1160 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

5030pF @ 100V

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

137A

Pin Count :

3

Drain-source On Resistance-Max :

0.08Ohm

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

DS Breakdown Voltage-Min :

650V

Factory Lead Time :

18 Weeks

Surface Mount :

No

Published :

2008

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

391W Tc

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-247-3

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

80m Ω @ 17.6A, 10V

Number of Terminations :

3

Transistor Element Material :

SILICON

Series :

CoolMOS™

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE