IPW65R080CFDAFKSA1
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- Mfr.Part #
- IPW65R080CFDAFKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 43.3A TO247-3
- Stock
- 72,827
- In Stock ：
- 72,827
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 18 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 391W Tc
- Additional Feature :
- High Reliability
- FET Type :
- N-Channel
- Operating Temperature :
- -40°C~150°C TJ
- Mount :
- Through Hole
- Max Dual Supply Voltage :
- 650V
- Number of Elements :
- 1
- Turn On Delay Time :
- 20 ns
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSFM-T3
- Drain-source On Resistance-Max :
- 0.08Ohm
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-247-3
- Pbfree Code :
- yes
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 6 ns
- Series :
- Automotive, AEC-Q101, CoolMOS™
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 4.5V @ 1.76mA
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 85 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4440pF @ 100V
- JESD-609 Code :
- e3
- Published :
- 2008
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 17.6A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 161nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Position :
- Single
- Rise Time :
- 18ns
- Mounting Type :
- Through Hole
- Drain to Source Breakdown Voltage :
- 650V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 43.3A Tc
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 43.3A
- Packaging :
- Tube
- Pin Count :
- 3
- Datasheets
- IPW65R080CFDAFKSA1
N-Channel Tube 80m Ω @ 17.6A, 10V ±20V 4440pF @ 100V 161nC @ 10V TO-247-3
IPW65R080CFDAFKSA1 Overview
A device's maximum input capacitance is 4440pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 43.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=650V, and this device has a drain-to-source breakdown voltage of 650V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 85 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 650V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
IPW65R080CFDAFKSA1 Features
a continuous drain current (ID) of 43.3A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 85 ns
IPW65R080CFDAFKSA1 Applications
There are a lot of Infineon Technologies
IPW65R080CFDAFKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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