IPW65R041CFDFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Package / Case :

TO-247-3

Power Dissipation-Max :

500W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

68.5A Tc

Published :

2008

Rds On (Max) @ Id, Vgs :

41m Ω @ 33.1A, 10V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

2185 mJ

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

26 Weeks

Pulsed Drain Current-Max (IDM) :

255A

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

650V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Drain-source On Resistance-Max :

0.041Ohm

JESD-30 Code :

R-PSFM-T3

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Vgs(th) (Max) @ Id :

4.5V @ 3.3mA

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Surface Mount :

No

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

DS Breakdown Voltage-Min :

650V

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

8400pF @ 100V

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

68.5A

Series :

CoolMOS™

Number of Elements :

1