IPW65R037C6FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Rise Time :

32ns

Mounting Type :

Through Hole

Published :

2008

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

140 ns

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

7240pF @ 100V

FET Type :

N-Channel

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

83.2A

Power Dissipation :

500W

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 3.3mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

37m Ω @ 33.1A, 10V

Current - Continuous Drain (Id) @ 25°C :

83.2A Tc

Transistor Application :

SWITCHING

Pin Count :

3

Series :

CoolMOS™ C6

Turn On Delay Time :

22 ns

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-247-3

ECCN Code :

EAR99

Fall Time (Typ) :

7 ns

Pulsed Drain Current-Max (IDM) :

297A

Max Dual Supply Voltage :

650V

Terminal Finish :

Tin (Sn)

Terminal Position :

Single

Lead Free :

Lead Free

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Number of Elements :

1

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

500W Tc