IPW60R280E6FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

600V

Drain to Source Voltage (Vdss) :

600V

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.28Ohm

Avalanche Energy Rating (Eas) :

284 mJ

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2008

Number of Elements :

1

Packaging :

Tube

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Vgs(th) (Max) @ Id :

3.5V @ 430μA

Current - Continuous Drain (Id) @ 25°C :

13.8A Tc

Pbfree Code :

yes

Series :

CoolMOS™

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

280m Ω @ 6.5A, 10V

Transistor Element Material :

SILICON

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

40A

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 100V

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Power Dissipation-Max :

104W Tc

Package / Case :

TO-247-3

Transistor Application :

SWITCHING