IPP04N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

MATTE TIN

FET Type :

N-Channel

Current Rating :

80A

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

2V @ 60μA

Rise Time :

4.5ns

Packaging :

Tube

Drain to Source Breakdown Voltage :

25V

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 55A, 10V

JESD-609 Code :

e3

Turn-Off Delay Time :

38 ns

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Fall Time (Typ) :

5.4 ns

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Mount :

Through Hole

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Pulsed Drain Current-Max (IDM) :

385A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

25V

Lead Free :

Contains Lead

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

80A

Drain-source On Resistance-Max :

0.0067Ohm

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

107W Tc

Power Dissipation :

107W

Package / Case :

TO-220-3

Element Configuration :

Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

3877pF @ 15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Published :

2003

Avalanche Energy Rating (Eas) :

290 mJ

Pin Count :

3

Series :

OptiMOS™

JEDEC-95 Code :

TO-220AB

Number of Elements :

1