IPP016N08NF2SAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Channels :

1 Channel

Product Type :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

12000 pF @ 40 V

Number of Elements per Chip :

1

Mounting Type :

Through Hole

Power Dissipation :

300

Power Dissipation (Max) :

3.8W (Ta), 300W (Tc)

Rds On (Max) @ Id, Vgs :

1.6mOhm @ 100A, 10V

Product Status :

Active

Manufacturer :

Infineon

Series :

StrongIRFET? 2

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

35A (Ta), 196A (Tc)

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

80 V

Package Type :

TO-220

Vgs (Max) :

±20V

FET Feature :

-

Subcategory :

MOSFETs

Minimum Operating Temperature :

- 55 C

Channel Type :

N

Pin Count :

3

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

3.8V @ 267μA

Package :

Tube

Brand :

Infineon Technologies

FET Type :

N-Channel

Packaging :

Tube

Base Product Number :

IPP016N

Maximum Operating Temperature :

+ 175 C

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

255 nC @ 10 V

Qualification :

-

Supplier Device Package :

PG-TO220-3

Operating Temperature :

-55°C ~ 175°C (TJ)

Mounting Style :

Through Hole

Continuous Drain Current Id :

196

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V