IPP020N06NAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.8V @ 143μA

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Packaging :

Tube

Drain to Source Breakdown Voltage :

60V

Drain Current-Max (Abs) (ID) :

29A

Reach Compliance Code :

not_compliant

Power Dissipation :

214W

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Gate Charge (Qg) (Max) @ Vgs :

106nC @ 10V

Avalanche Energy Rating (Eas) :

420 mJ

Published :

2008

Power Dissipation-Max :

3W Ta 214W Tc

JESD-609 Code :

e3

Pbfree Code :

No

Pin Count :

3

Number of Pins :

3

FET Type :

N-Channel

Mount :

Through Hole

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

29A Ta 120A Tc

Number of Elements :

1

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Factory Lead Time :

13 Weeks

Number of Terminations :

3

Turn-Off Delay Time :

51 ns

Mounting Type :

Through Hole

Rise Time :

45ns

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

60V

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

120A

Drain-source On Resistance-Max :

0.002Ohm

Lead Free :

Contains Lead

Vgs (Max) :

±20V

Fall Time (Typ) :

19 ns

Turn On Delay Time :

24 ns

Input Capacitance (Ciss) (Max) @ Vds :

7800pF @ 30V

Transistor Element Material :

SILICON

Halogen Free :

Halogen Free

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

480A

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

OptiMOS™