IPP023N04NGXKSA1
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- Mfr.Part #
- IPP023N04NGXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 90A TO220-3
- Stock
- 5,251
- In Stock ：
- 5,251
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 15.95mm
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4V @ 95µA
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- JEDEC-95 Code :
- TO-220AB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Number of Pins :
- 3
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Tin (Sn)
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Length :
- 10.36mm
- Pulsed Drain Current-Max (IDM) :
- 400A
- Max Dual Supply Voltage :
- 40V
- Input Capacitance (Ciss) (Max) @ Vds :
- 10000pF @ 20V
- Width :
- 4.57mm
- Turn On Delay Time :
- 27 ns
- Power Dissipation-Max :
- 167W Tc
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- Factory Lead Time :
- 13 Weeks
- Pbfree Code :
- yes
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 2.3m Ω @ 90A, 10V
- Power Dissipation :
- 167W
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~175°C TJ
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Element Configuration :
- Single
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- OptiMOS™
- Published :
- 2008
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Packaging :
- Tube
- Turn-Off Delay Time :
- 40 ns
- JESD-609 Code :
- e3
- Continuous Drain Current (ID) :
- 90A
- Number of Terminations :
- 3
- Datasheets
- IPP023N04NGXKSA1
N-Channel Tube 2.3m Ω @ 90A, 10V ±20V 10000pF @ 20V 120nC @ 10V TO-220-3
IPP023N04NGXKSA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 150 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 10000pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 90A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 40 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 27 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 40V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPP023N04NGXKSA1 Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 90A
the turn-off delay time is 40 ns
based on its rated peak drain current 400A.
IPP023N04NGXKSA1 Applications
There are a lot of Infineon Technologies
IPP023N04NGXKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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