IPP015N04NGXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Power Dissipation-Max :

250W Tc

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 20V

Avalanche Energy Rating (Eas) :

865 mJ

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

120A

JESD-609 Code :

e3

Number of Terminations :

3

Terminal Position :

Single

Terminal Finish :

Tin (Sn)

Published :

2008

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

4V @ 200μA

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.0015Ohm

Pulsed Drain Current-Max (IDM) :

400A

DS Breakdown Voltage-Min :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Transistor Element Material :

SILICON

Factory Lead Time :

13 Weeks

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 100A, 10V

Package / Case :

TO-220-3

FET Type :

N-Channel

Vgs (Max) :

±20V

Surface Mount :

No

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

40V

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Series :

OptiMOS™

ECCN Code :

EAR99

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ