IPP042N03LGXKSA1

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Mfr.Part #
IPP042N03LGXKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 30V 70A TO220-3
Stock
10,611
In Stock :
10,611

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Rds On (Max) @ Id, Vgs :
4.2m Ω @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Mount :
Through Hole
JESD-609 Code :
e3
Drain-source On Resistance-Max :
0.006Ohm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Halogen Free :
Halogen Free
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 15V
Pulsed Drain Current-Max (IDM) :
400A
Series :
OptiMOS™
Transistor Element Material :
SILICON
Packaging :
Tube
Published :
2008
Length :
10.36mm
Fall Time (Typ) :
4.4 ns
Rise Time :
5.6ns
Power Dissipation-Max :
79W Tc
Current - Continuous Drain (Id) @ 25°C :
70A Tc
RoHS Status :
ROHS3 Compliant
Height :
15.95mm
Vgs(th) (Max) @ Id :
2.2V @ 250µA
REACH SVHC :
No SVHC
Factory Lead Time :
13 Weeks
Element Configuration :
Single
Continuous Drain Current (ID) :
70A
ECCN Code :
EAR99
Power Dissipation :
79W
Avalanche Energy Rating (Eas) :
60 mJ
Drain to Source Breakdown Voltage :
30V
Turn-Off Delay Time :
28 ns
Operating Mode :
ENHANCEMENT MODE
Threshold Voltage :
1V
Qualification Status :
Not Qualified
Width :
4.57mm
Package / Case :
TO-220-3
Mounting Type :
Through Hole
Turn On Delay Time :
7.4 ns
Max Dual Supply Voltage :
30V
Terminal Finish :
Tin (Sn)
Vgs (Max) :
±20V
Additional Feature :
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Gate to Source Voltage (Vgs) :
20V
Number of Terminations :
3
Number of Elements :
1
Operating Temperature :
-55°C~175°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Number of Pins :
3
FET Type :
N-Channel
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-220AB
Pbfree Code :
yes
Pin Count :
3
Datasheets
IPP042N03LGXKSA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPP042N03LGXKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, IPP042N03LGXKSA1 pinout, IPP042N03LGXKSA1 datasheet PDF, IPP042N03LGXKSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPP042N03LGXKSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPP042N03LGXKSA1


N-Channel Tube 4.2m Ω @ 30A, 10V ±20V 3900pF @ 15V 38nC @ 10V TO-220-3

IPP042N03LGXKSA1 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 60 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3900pF @ 15V.This device has a continuous drain current (ID) of [70A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 28 ns.A maximum pulsed drain current of 400A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 7.4 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 30V.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

IPP042N03LGXKSA1 Features


the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 28 ns
based on its rated peak drain current 400A.
a threshold voltage of 1V


IPP042N03LGXKSA1 Applications


There are a lot of Infineon Technologies
IPP042N03LGXKSA1 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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