IPP034N08N5AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Turn On Delay Time :

18 ns

Drain-source On Resistance-Max :

0.0034Ohm

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Turn-Off Delay Time :

37 ns

RoHS Status :

ROHS3 Compliant

Max Dual Supply Voltage :

80V

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 100A, 10V

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Lead Free :

Contains Lead

Rise Time :

12ns

Halogen Free :

Halogen Free

Number of Channels :

1

Fall Time (Typ) :

12 ns

Published :

2013

Pulsed Drain Current-Max (IDM) :

480A

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

167W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3

Series :

OptiMOS™

Factory Lead Time :

13 Weeks

Packaging :

Tube

Drain to Source Breakdown Voltage :

80V

Pbfree Code :

yes

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

120A

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

6240pF @ 40V

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Weight :

6.000006g

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Vgs(th) (Max) @ Id :

3.8V @ 108μA

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Number of Elements :

1