IPP027N08N5AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Dual Supply Voltage :

80V

Series :

OptiMOS™

Reach Compliance Code :

not_compliant

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

FET Type :

N-Channel

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

80V

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 100A, 10V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Package / Case :

TO-220-3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0027Ohm

Rise Time :

14ns

Turn-Off Delay Time :

46 ns

Turn On Delay Time :

22 ns

Gate Charge (Qg) (Max) @ Vgs :

123nC @ 10V

Fall Time (Typ) :

15 ns

Pulsed Drain Current-Max (IDM) :

480A

Continuous Drain Current (ID) :

120A

Published :

2013

Lead Free :

Contains Lead

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

3.8V @ 154μA

Input Capacitance (Ciss) (Max) @ Vds :

8970pF @ 40V

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

13 Weeks

Avalanche Energy Rating (Eas) :

374 mJ

Pbfree Code :

yes

Weight :

6.000006g

Mount :

Through Hole

Power Dissipation-Max :

214W Tc

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Halogen Free :

Halogen Free

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Transistor Element Material :

SILICON

Element Configuration :

Single

JESD-609 Code :

e3

Number of Channels :

1