IPB65R660CFDATMA1
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- Mfr.Part #
- IPB65R660CFDATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 6A D2PAK
- Stock
- 97
- In Stock ：
- 97
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2008
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 62.5W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Series :
- CoolMOS™
- Mount :
- Surface Mount
- Max Dual Supply Voltage :
- 650V
- Rds On (Max) @ Id, Vgs :
- 660m Ω @ 2.1A, 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.66Ohm
- Drain Current-Max (Abs) (ID) :
- 6A
- Terminal Form :
- Gull wing
- Number of Terminations :
- 2
- Lead Free :
- Contains Lead
- Halogen Free :
- Halogen Free
- Case Connection :
- DRAIN
- Pin Count :
- 4
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 17A
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 615pF @ 100V
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Pbfree Code :
- No
- Rise Time :
- 8ns
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 6A
- Fall Time (Typ) :
- 10 ns
- Turn-Off Delay Time :
- 40 ns
- Avalanche Energy Rating (Eas) :
- 115 mJ
- Turn On Delay Time :
- 9 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4.5V @ 200μA
- JESD-30 Code :
- R-PSSO-G2
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Datasheets
- IPB65R660CFDATMA1
IPB65R660CFDATMA1 Documents
N-Channel Tape & Reel (TR) 660m Ω @ 2.1A, 10V ±20V 615pF @ 100V 22nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB65R660CFDATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 115 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 615pF @ 100V.This device conducts a continuous drain current (ID) of 6A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 6A.When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 17A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 650V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPB65R660CFDATMA1 Features
the avalanche energy rating (Eas) is 115 mJ
a continuous drain current (ID) of 6A
the turn-off delay time is 40 ns
based on its rated peak drain current 17A.
IPB65R660CFDATMA1 Applications
There are a lot of Infineon Technologies
IPB65R660CFDATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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