IPB60R099CPATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pbfree Code :

No

Drain Current-Max (Abs) (ID) :

31A

Rds On (Max) @ Id, Vgs :

99m Ω @ 18A, 10V

DS Breakdown Voltage-Min :

600V

Pulsed Drain Current-Max (IDM) :

93A

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2800pF @ 100V

Terminal Position :

Single

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Series :

CoolMOS™

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

JESD-609 Code :

e3

Published :

2006

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Number of Terminations :

2

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

255W Tc

Transistor Application :

SWITCHING

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Drain to Source Voltage (Vdss) :

600V

Vgs(th) (Max) @ Id :

3.5V @ 1.2mA

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.099Ohm

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Avalanche Energy Rating (Eas) :

800 mJ

Surface Mount :

yes