IPB600N25N3GATMA1
- Mfr.Part #
- IPB600N25N3GATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 25A D2PAK
- Stock
- 13,371
- In Stock :
- 13,371
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.06Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 2350pF @ 100V
- Power Dissipation :
- 136W
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 90µA
- Mount :
- Surface Mount
- Series :
- OptiMOS™
- Reach Compliance Code :
- not_compliant
- Terminal Form :
- Gull wing
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Fall Time (Typ) :
- 8 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 2
- Continuous Drain Current (ID) :
- 25A
- Number of Pins :
- 3
- Factory Lead Time :
- 13 Weeks
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- JESD-30 Code :
- R-PSSO-G2
- Turn On Delay Time :
- 10 ns
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Pin Count :
- 4
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 25A, 10V
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Lead Free :
- Contains Lead
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Published :
- 2008
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 136W Tc
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 22 ns
- Max Dual Supply Voltage :
- 250V
- Halogen Free :
- Halogen Free
- Datasheets
- IPB600N25N3GATMA1

N-Channel Tape & Reel (TR) 60m Ω @ 25A, 10V ±20V 2350pF @ 100V 29nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB600N25N3GATMA1 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2350pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 25A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 22 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 250V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPB600N25N3GATMA1 Features
a continuous drain current (ID) of 25A
the turn-off delay time is 22 ns
IPB600N25N3GATMA1 Applications
There are a lot of Infineon Technologies
IPB600N25N3GATMA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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