IPB600N25N3GATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Dual Supply Voltage :

250V

Terminal Position :

Single

Drain-source On Resistance-Max :

0.06Ohm

Turn On Delay Time :

10 ns

Vgs(th) (Max) @ Id :

4V @ 90µA

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2350pF @ 100V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Number of Terminations :

2

Power Dissipation :

136W

Continuous Drain Current (ID) :

25A

Rds On (Max) @ Id, Vgs :

60m Ω @ 25A, 10V

Mount :

Surface Mount

Published :

2008

Reach Compliance Code :

not_compliant

Mounting Type :

Surface Mount

Series :

OptiMOS™

Factory Lead Time :

13 Weeks

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Fall Time (Typ) :

8 ns

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Turn-Off Delay Time :

22 ns

Halogen Free :

Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

No

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

136W Tc