IPB60R060C7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

2850pF @ 400V

Drain-source On Resistance-Max :

0.06Ohm

Terminal Position :

Single

Factory Lead Time :

18 Weeks

DS Breakdown Voltage-Min :

600V

Vgs(th) (Max) @ Id :

4V @ 800μA

Drain Current-Max (Abs) (ID) :

35A

Package / Case :

TO-263-4, D2Pak (3 Leads + Tab), TO-263AA

Power Dissipation-Max :

162W Tc

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Series :

CoolMOS™ C7

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

159 mJ

Pulsed Drain Current-Max (IDM) :

135A

Transistor Element Material :

SILICON

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

60m Ω @ 15.9A, 10V

Drain to Source Voltage (Vdss) :

650V

JEDEC-95 Code :

TO-263AB

Published :

2014

Mounting Type :

Surface Mount

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Case Connection :

DRAIN

Vgs (Max) :

±20V