IPB60R055CFD7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

178W Tc

Drain to Source Voltage (Vdss) :

650V

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

38A

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3194pF @ 400V

Vgs(th) (Max) @ Id :

4.5V @ 900μA

RoHS Status :

RoHS Compliant

Series :

CoolMOS™ CFD7

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

79nC @ 10V

Reach Compliance Code :

Compliant

Avalanche Energy Rating (Eas) :

180 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Case Connection :

DRAIN

Surface Mount :

yes

Drain-source On Resistance-Max :

0.055Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

600V

Pulsed Drain Current-Max (IDM) :

153A

Factory Lead Time :

18 Weeks

Rds On (Max) @ Id, Vgs :

55m Ω @ 18A, 10V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V