IPB65R310CFDAATMA1
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- Mfr.Part #
- IPB65R310CFDAATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 11.4A D2PAK
- Stock
- 1,407
- In Stock ：
- 1,407
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Contains Lead
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Mount :
- Surface Mount
- Max Dual Supply Voltage :
- 650V
- Pin Count :
- 4
- Case Connection :
- DRAIN
- Halogen Free :
- Halogen Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -40°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Published :
- 2008
- Number of Terminations :
- 2
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1110pF @ 100V
- Factory Lead Time :
- 18 Weeks
- Vgs(th) (Max) @ Id :
- 4.5V @ 440μA
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 11.4A
- Pbfree Code :
- No
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 45 ns
- Additional Feature :
- High Reliability
- Reach Compliance Code :
- not_compliant
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSSO-G2
- Rise Time :
- 7.5ns
- Current - Continuous Drain (Id) @ 25°C :
- 11.4A Tc
- Turn On Delay Time :
- 11 ns
- Fall Time (Typ) :
- 7 ns
- Terminal Form :
- Gull wing
- Series :
- Automotive, AEC-Q101, CoolMOS™
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 104.2W Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rds On (Max) @ Id, Vgs :
- 310m Ω @ 4.4A, 10V
- Datasheets
- IPB65R310CFDAATMA1
N-Channel Tape & Reel (TR) 310m Ω @ 4.4A, 10V ±20V 1110pF @ 100V 41nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB65R310CFDAATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 290 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1110pF @ 100V.This device conducts a continuous drain current (ID) of 11.4A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 45 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 650V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPB65R310CFDAATMA1 Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 11.4A
the turn-off delay time is 45 ns
IPB65R310CFDAATMA1 Applications
There are a lot of Infineon Technologies
IPB65R310CFDAATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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