IPB65R280E6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.5V @ 440µA

Turn-Off Delay Time :

76 ns

Mount :

Surface Mount

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

13.8A

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Series :

CoolMOS™ E6

Number of Elements :

1

Drain to Source Breakdown Voltage :

650V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Halogen Free :

Halogen Free

Power Dissipation-Max :

104W Tc

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 100V

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Rds On (Max) @ Id, Vgs :

280m Ω @ 4.4A, 10V

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Avalanche Energy Rating (Eas) :

290 mJ

Weight :

1.946308g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Number of Terminations :

2

Published :

2008

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Factory Lead Time :

12 Weeks

Pbfree Code :

No

Lead Free :

Contains Lead

Turn On Delay Time :

11 ns

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Rise Time :

9ns

Max Dual Supply Voltage :

650V

Drain-source On Resistance-Max :

0.28Ohm

Fall Time (Typ) :

9 ns

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

13.8A Tc

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED