IPB65R230CFD7AATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4.5V @ 260μA

Packaging :

Cut Tape

Input Capacitance (Ciss) (Max) @ Vds :

1044 pF @ 400 V

Qualification :

AEC-Q101

FET Feature :

-

Maximum Operating Temperature :

+ 150 C

Manufacturer :

Infineon

Power Dissipation (Max) :

63W (Tc)

Brand :

Infineon Technologies

Number of Channels :

1 Channel

Channel Type :

N Channel

Mounting Style :

SMD/SMT

Series :

CoolMOS?

Product Category :

MOSFET

Tradename :

CoolMOS

Transistor Polarity :

N-Channel

Supplier Device Package :

PG-TO263-3

Package :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Subcategory :

MOSFETs

Drive Voltage (Max Rds On, Min Rds On) :

10V

Mounting Type :

Surface Mount

Continuous Drain Current Id :

11

Operating Temperature :

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs :

230mOhm @ 5.2A, 10V

Channel Mode :

Enhancement

Power Dissipation :

63

Product Type :

MOSFET

Base Product Number :

IPB65R

Vgs (Max) :

±20V

FET Type :

N-Channel

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

23 nC @ 10 V

Drain to Source Voltage (Vdss) :

650 V

Current - Continuous Drain (Id) @ 25°C :

11A (Tc)

Minimum Operating Temperature :

- 40 C

Rise Time :

13 ns