IPB65R150CFDATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4.5V @ 900μA

Max Dual Supply Voltage :

650V

Transistor Element Material :

SILICON

Factory Lead Time :

18 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

4

Pbfree Code :

No

Power Dissipation :

195.3W

Input Capacitance (Ciss) (Max) @ Vds :

2340pF @ 100V

FET Type :

N-Channel

Height :

4.7mm

Terminal Form :

Gull wing

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

150m Ω @ 9.3A, 10V

Number of Elements :

1

Rise Time :

7.6ns

Power Dissipation-Max :

195.3W Tc

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

22.4A Tc

Number of Terminations :

2

Drain to Source Breakdown Voltage :

650V

Turn On Delay Time :

12.4 ns

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

22.4A

Turn-Off Delay Time :

52.8 ns

Pulsed Drain Current-Max (IDM) :

72A

Gate to Source Voltage (Vgs) :

20V

Packaging :

Cut Tape (CT)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Max Junction Temperature (Tj) :

150°C

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Series :

CoolMOS™

Number of Channels :

1

Transistor Application :

SWITCHING

Published :

2008

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead

Case Connection :

DRAIN

Mount :

Surface Mount

Fall Time (Typ) :

5.6 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED