IPB65R150CFDAATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Power Dissipation-Max :

195.3W Tc

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

150m Ω @ 9.3A, 10V

Pulsed Drain Current-Max (IDM) :

72A

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

22.4A Tc

Vgs (Max) :

±20V

Published :

2008

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

22.4A

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.15Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2340pF @ 100V

Halogen Free :

Halogen Free

Series :

Automotive, AEC-Q101, CoolMOS™

Operating Temperature :

-40°C~150°C TJ

Number of Terminations :

2

Mounting Type :

Surface Mount

Number of Elements :

1

Pbfree Code :

No

Max Dual Supply Voltage :

650V

Terminal Position :

Single

Factory Lead Time :

18 Weeks

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Avalanche Energy Rating (Eas) :

614 mJ

Additional Feature :

High Reliability

Pin Count :

4

Lead Free :

Contains Lead

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4.5V @ 900μA