IPB65R110CFDATMA1
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- Mfr.Part #
- IPB65R110CFDATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 31.2A D2PAK
- Stock
- 21,874
- In Stock ：
- 21,874
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 1.3mA
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 31.2A
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- Lead Free :
- Contains Lead
- Turn-Off Delay Time :
- 68 ns
- Terminal Form :
- Gull wing
- Avalanche Energy Rating (Eas) :
- 845 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Gate to Source Voltage (Vgs) :
- 20V
- REACH SVHC :
- No SVHC
- Current - Continuous Drain (Id) @ 25°C :
- 31.2A Tc
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 16 ns
- Factory Lead Time :
- 18 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 277.8W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 3240pF @ 100V
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 6 ns
- Threshold Voltage :
- 4V
- Pulsed Drain Current-Max (IDM) :
- 99.6A
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- No
- Rise Time :
- 11ns
- Radiation Hardening :
- No
- Published :
- 2008
- Pin Count :
- 4
- Max Dual Supply Voltage :
- 650V
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 12.7A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Terminal Position :
- Single
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Number of Pins :
- 3
- Series :
- CoolMOS™
- Halogen Free :
- Halogen Free
- Case Connection :
- DRAIN
- Datasheets
- IPB65R110CFDATMA1
IPB65R110CFDATMA1 Documents
N-Channel Tape & Reel (TR) 110m Ω @ 12.7A, 10V ±20V 3240pF @ 100V 118nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB65R110CFDATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 845 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3240pF @ 100V.This device conducts a continuous drain current (ID) of 31.2A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 68 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 99.6A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 650V power, it supports a dual voltage supply of up to maximum.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPB65R110CFDATMA1 Features
the avalanche energy rating (Eas) is 845 mJ
a continuous drain current (ID) of 31.2A
the turn-off delay time is 68 ns
based on its rated peak drain current 99.6A.
a threshold voltage of 4V
IPB65R110CFDATMA1 Applications
There are a lot of Infineon Technologies
IPB65R110CFDATMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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