IPB65R050CFD7AATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

102 nC @ 10 V

Current - Continuous Drain (Id) @ 25°C :

45A (Tc)

Operating Temperature :

-40°C ~ 150°C (TJ)

Qualification :

AEC-Q101

Product Status :

Active

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

650 V

Input Capacitance (Ciss) (Max) @ Vds :

4975 pF @ 400 V

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Channel Mode :

Enhancement

FET Type :

N-Channel

Minimum Operating Temperature :

- 40 C

Continuous Drain Current Id :

45

Power Dissipation :

227

Brand :

Infineon Technologies

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On, Min Rds On) :

10V

Transistor Polarity :

N-Channel

Base Product Number :

IPB65R

Vgs (Max) :

±30V

Power Dissipation (Max) :

227W (Tc)

FET Feature :

-

Product Type :

MOSFET

Supplier Device Package :

PG-TO263-3

Package :

Digi-Reel?

Mounting Style :

SMD/SMT

Channel Type :

N Channel

Number of Channels :

1 Channel

Packaging :

Cut Tape

Manufacturer :

Infineon

Tradename :

CoolMOS

Vgs(th) (Max) @ Id :

4.5V @ 1.24mA

Series :

CoolMOS?

Subcategory :

MOSFETs

Rise Time :

12 ns

Rds On (Max) @ Id, Vgs :

50mOhm @ 24.8A, 10V