IPB60R600P6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

557pF @ 100V

Published :

2015

Pulsed Drain Current-Max (IDM) :

18A

Power Dissipation-Max :

63W Tc

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Case Connection :

DRAIN

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

7.3A

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.6Ohm

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

7.3A Tc

Lead Free :

Contains Lead

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

600m Ω @ 2.4A, 10V

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4.5V @ 200μA

Max Dual Supply Voltage :

600V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Series :

CoolMOS™ P6

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Factory Lead Time :

12 Weeks

Number of Elements :

1

Avalanche Energy Rating (Eas) :

133 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel