IPB60R600CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Continuous Drain Current (ID) :

6.1 A

Manufacturer :

Infineon

Input Capacitance :

550 pF

Drain to Source Resistance :

600 mΩ

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

Product Status :

Active

Supplier Device Package :

PG-TO263-3-2

Transistor Polarity :

N-Channel

Brand :

Infineon Technologies

Gate to Source Voltage (Vgs) :

20 V

Mounting Type :

Surface Mount

Width :

9.25 mm

Nominal Vgs :

3 V

Rise Time :

12 ns

Tradename :

CoolMOS

Mounting Style :

SMD/SMT

Transistor Type :

1 N-Channel

Max Power Dissipation :

60 W

Package / Case :

TO-263-3

Vgs (Max) :

±20V

Element Configuration :

Single

Package :

Bulk

Power Dissipation :

60 W

Rds On Max :

600 mΩ

Maximum Operating Temperature :

+ 150 C

Vgs(th) (Max) @ Id :

3.5V @ 220µA

REACH SVHC :

No SVHC

Configuration :

Single

Dual Supply Voltage :

650 V

Halogen Free :

Halogen Free

Type :

600 V CoolMOS C6 Power Transistor

Current - Continuous Drain (Id) @ 25°C :

6.1A (Tc)

Subcategory :

MOSFETs

Drain to Source Breakdown Voltage :

600 V

Rds On (Max) @ Id, Vgs :

600mOhm @ 3.3A, 10V

Termination :

SMD/SMT

Continuous Drain Current Id :

6.1

Turn-On Delay Time :

17 ns

Channel Mode :

Enhancement

FET Type :

N-Channel

Packaging :

MouseReel

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation (Max) :

60W (Tc)

Input Capacitance (Ciss) (Max) @ Vds :

550 pF @ 100 V

Threshold Voltage :

3 V

Min Operating Temperature :

-55 °C

RoHS :

Details

Number of Pins :

3

Product Type :

MOSFET

Length :

10 mm

Max Operating Temperature :

150 °C

Gate Charge (Qg) (Max) @ Vgs :

27 nC @ 10 V

Turn-Off Delay Time :

75 ns

Height :

4.4 mm

Channel Type :

N

Series :

CoolMOS CE

Drain to Source Voltage (Vdss) :

600 V

Product Category :

MOSFET

Technology :

Si

Drive Voltage (Max Rds On, Min Rds On) :

10V