IPB60R520CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

66W (Tc)

Manufacturer :

Infineon

Threshold Voltage :

3 V

Gate to Source Voltage (Vgs) :

20 V

Rds On Max :

200 mΩ

Number of Pins :

3

Halogen Free :

Halogen Free

Continuous Drain Current (ID) :

6.8 A

REACH SVHC :

No SVHC

Product Type :

MOSFET

Number of Channels :

1 Channel

Input Capacitance :

1.12 nF

Transistor Polarity :

N-Channel

Packaging :

Digi-Reel®

Drain to Source Breakdown Voltage :

600 V

Turn-Off Delay Time :

74 ns

Dual Supply Voltage :

650 V

Tradename :

CoolMOS

Continuous Drain Current Id :

6.8

Drain to Source Resistance :

520 mΩ

Vgs (Max) :

±20V

Turn-On Delay Time :

17 ns

FET Feature :

-

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

6.8A (Tc)

Operating Temperature :

-55°C ~ 150°C (TJ)

Min Operating Temperature :

-55 °C

Maximum Operating Temperature :

+ 150 C

Max Operating Temperature :

150 °C

Minimum Operating Temperature :

- 55 C

Gate Charge (Qg) (Max) @ Vgs :

31 nC @ 10 V

Nominal Vgs :

3 V

Mounting Style :

SMD/SMT

Length :

10 mm

Brand :

Infineon Technologies

Drive Voltage (Max Rds On, Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

630 pF @ 100 V

Width :

9.25 mm

Series :

CoolMOS CE

Transistor Type :

1 N-Channel

Technology :

Si

Mounting Type :

Surface Mount

Subcategory :

MOSFETs

Product Category :

MOSFET

Package / Case :

TO-263-3

Rise Time :

12 ns

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Element Configuration :

Single

Supplier Device Package :

PG-TO263-3-2

Drain to Source Voltage (Vdss) :

200 V

Rds On (Max) @ Id, Vgs :

520mOhm @ 3.8A, 10V

Power Dissipation :

66 W

RoHS :

Compliant

Product Status :

Active

Package :

Bulk

Height :

4.4 mm

Channel Mode :

Enhancement

Channel Type :

N

Max Power Dissipation :

95 W

Termination :

SMD/SMT

Configuration :

Single