IPB60R280P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

36A

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

280m Ω @ 3.8A, 10V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

761pF @ 400V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

38 mJ

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

12A Tc

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.28Ohm

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 190μA

DS Breakdown Voltage-Min :

600V

Terminal Form :

Gull wing

Power Dissipation-Max :

53W Tc

Transistor Application :

SWITCHING

Terminal Position :

Single

Factory Lead Time :

18 Weeks

Series :

CoolMOS™ P7

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Published :

2014

Drain to Source Voltage (Vdss) :

600V