IPB60R280P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Power Dissipation-Max :

53W Tc

Input Capacitance (Ciss) (Max) @ Vds :

761pF @ 400V

Series :

CoolMOS™ P7

Number of Terminations :

2

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.28Ohm

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

280m Ω @ 3.8A, 10V

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Published :

2014

Pulsed Drain Current-Max (IDM) :

36A

Avalanche Energy Rating (Eas) :

38 mJ

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 190μA

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

600V

Drain to Source Voltage (Vdss) :

600V

Factory Lead Time :

18 Weeks

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Transistor Application :

SWITCHING