IPB60R280C6ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

2

Halogen Free :

Halogen Free

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Continuous Drain Current (ID) :

13.8A

Series :

CoolMOS™

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Rise Time :

11ns

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

13.8A Tc

Terminal Position :

Single

Pin Count :

4

Pulsed Drain Current-Max (IDM) :

40A

Lead Free :

Contains Lead

Power Dissipation-Max :

104W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Number of Pins :

3

FET Type :

N-Channel

Turn On Delay Time :

13 ns

Published :

2008

Rds On (Max) @ Id, Vgs :

280m Ω @ 6.5A, 10V

Pbfree Code :

No

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Turn-Off Delay Time :

100 ns

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

284 mJ

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.28Ohm

Max Dual Supply Voltage :

600V

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

12 ns

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3.5V @ 430μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Mount :

Surface Mount

Power Dissipation :

104W

Drive Voltage (Max Rds On,Min Rds On) :

10V