IPB60R250CPATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

650V

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

40A

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

12A Tc

DS Breakdown Voltage-Min :

600V

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2008

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3.5V @ 440µA

Number of Terminations :

2

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

12A

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

250m Ω @ 7.8A, 10V

Terminal Finish :

Tin (Sn)

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Pin Count :

4

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

104W Tc

Drain-source On Resistance-Max :

0.25Ohm

Series :

CoolMOS™

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

345 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 100V