IPB60R250CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

250 mΩ

Nominal Vgs :

3 V

Max Operating Temperature :

150 °C

Turn-On Delay Time :

40 ns

Drain to Source Voltage (Vdss) :

650 V

Vgs(th) (Max) @ Id :

3.5V @ 520µA

Number of Pins :

3

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

12 A

Gate to Source Voltage (Vgs) :

20 V

Dual Supply Voltage :

650 V

FET Feature :

-

Element Configuration :

Single

Drain to Source Breakdown Voltage :

600 V

Power Dissipation (Max) :

104W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

35 nC @ 10 V

Min Operating Temperature :

-55 °C

Current - Continuous Drain (Id) @ 25°C :

12A (Tc)

Series :

CoolMOS™

Package :

Bulk

Rds On Max :

250 mΩ

Supplier Device Package :

PG-TO263-3-2

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package / Case :

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Technology :

MOSFET (Metal Oxide)

Product Status :

Active

Halogen Free :

Halogen Free

Power Dissipation :

104

Channel Type :

N

Rise Time :

17 ns

Length :

10.31 mm

Operating Temperature :

-55°C ~ 150°C (TJ)

Mounting Type :

Surface Mount

Max Power Dissipation :

104 W

Input Capacitance :

1.2 nF

RoHS :

Compliant

Continuous Drain Current Id :

12

REACH SVHC :

No SVHC

Turn-Off Delay Time :

110 ns

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

250mOhm @ 7.8A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1200 pF @ 100 V

Height :

4.57 mm

Width :

9.45 mm

Termination :

SMD/SMT