IPB60R180P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2014

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 280μA

Series :

CoolMOS™ P7

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

56 mJ

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Drain-source On Resistance-Max :

0.18ohm

Input Capacitance (Ciss) (Max) @ Vds :

1081pF @ 400V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

600V

JESD-609 Code :

e3

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

180m Ω @ 5.6A, 10V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Factory Lead Time :

18 Weeks

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

72W Tc

Pulsed Drain Current-Max (IDM) :

53A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

600V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Reach Compliance Code :

not_compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN