IPB60R160C6ATMA1
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- Mfr.Part #
- IPB60R160C6ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 23.8A D2PAK
- Stock
- 6,197
- In Stock ：
- 6,197
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- No
- Power Dissipation :
- 176W
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 70A
- Terminal Position :
- Single
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin (Sn)
- Continuous Drain Current (ID) :
- 23.8A
- Reach Compliance Code :
- not_compliant
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 3.5V @ 750μA
- Avalanche Energy Rating (Eas) :
- 497 mJ
- Turn On Delay Time :
- 13 ns
- Published :
- 2008
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Number of Pins :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Halogen Free :
- Halogen Free
- Fall Time (Typ) :
- 8 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1660pF @ 100V
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 11.3A, 10V
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 10V
- Lead Free :
- Contains Lead
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- CoolMOS™
- Max Dual Supply Voltage :
- 600V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Current - Continuous Drain (Id) @ 25°C :
- 23.8A Tc
- Turn-Off Delay Time :
- 96 ns
- Power Dissipation-Max :
- 176W Tc
- Pin Count :
- 4
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Datasheets
- IPB60R160C6ATMA1
N-Channel Tape & Reel (TR) 160m Ω @ 11.3A, 10V ±20V 1660pF @ 100V 75nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPB60R160C6ATMA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 497 mJ.The maximum input capacitance of this device is 1660pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 23.8A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 96 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 70A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 600V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.
IPB60R160C6ATMA1 Features
the avalanche energy rating (Eas) is 497 mJ
a continuous drain current (ID) of 23.8A
the turn-off delay time is 96 ns
based on its rated peak drain current 70A.
IPB60R160C6ATMA1 Applications
There are a lot of Infineon Technologies
IPB60R160C6ATMA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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