IMX8T108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current Rating :

50mA

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

120V

Gain Bandwidth Product :

140MHz

Mount :

Surface Mount

Transition Frequency :

140MHz

hFE Min :

180

ECCN Code :

EAR99

Collector Base Voltage (VCBO) :

120V

Operating Temperature :

150°C TJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Published :

2005

Transistor Type :

2 NPN (Dual)

Collector Emitter Voltage (VCEO) :

120V

Number of Pins :

6

Package / Case :

SC-74, SOT-457

Pin Count :

6

Number of Elements :

2

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Application :

AMPLIFIER

Max Breakdown Voltage :

120V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.21.00.75

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2mA 6V

Mounting Type :

Surface Mount

JESD-609 Code :

e1

Continuous Collector Current :

50mA

Number of Terminations :

6

Terminal Form :

Gull wing

Max Power Dissipation :

300mW

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1mA, 10mA

Radiation Hardening :

No

Max Collector Current :

50mA

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

120V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

5V

Polarity :

NPN

Element Configuration :

Dual

Base Part Number :

*MX8

Current - Collector Cutoff (Max) :

500nA ICBO