IMX8-7

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Base Part Number :

IMX8

Number of Terminations :

6

Number of Elements :

2

Voltage - Rated DC :

120V

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2mA 6V

Gain Bandwidth Product :

140MHz

Package / Case :

SOT-23-6

Polarity :

NPN

Packaging :

Tape and Reel (TR)

Transistor Type :

2 NPN (Dual)

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

19 Weeks

Number of Pins :

6

Radiation Hardening :

No

Frequency :

140MHz

hFE Min :

180

Max Breakdown Voltage :

120V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1mA, 10mA

Emitter Base Voltage (VEBO) :

5V

Max Collector Current :

50mA

Terminal Finish :

Matte Tin (Sn)

Collector Emitter Breakdown Voltage :

120V

Weight :

29.993795mg

Width :

1.6mm

Transition Frequency :

140MHz

Mount :

Surface Mount

JESD-609 Code :

e3

Published :

2007

Pin Count :

6

Power Dissipation :

300mW

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Current Rating :

50mA

Height :

1.1mm

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

500nA ICBO

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Collector Emitter Saturation Voltage :

500mV

Collector Emitter Voltage (VCEO) :

120V

Max Power Dissipation :

300mW

Collector Base Voltage (VCBO) :

120V

ECCN Code :

EAR99

Length :

3mm