IMX25T110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

20V

Published :

2010

Number of Elements :

2

Continuous Collector Current :

300mA

Terminal Form :

Gull wing

Collector Base Voltage (VCBO) :

50V

Operating Temperature :

150°C TJ

Max Collector Current :

300mA

Number of Pins :

6

Mounting Type :

Surface Mount

HTS Code :

8541.21.00.95

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

10

Max Breakdown Voltage :

20V

Transition Frequency :

35MHz

Collector Emitter Saturation Voltage :

50mV

Element Configuration :

Dual

Vce Saturation (Max) @ Ib, Ic :

100mV @ 3mA, 30mA

Base Part Number :

IMX25

ECCN Code :

EAR99

hFE Min :

820

Polarity :

NPN

Mount :

Surface Mount

Transistor Element Material :

SILICON

Radiation Hardening :

No

Factory Lead Time :

13 Weeks

Terminal Finish :

TIN SILVER COPPER

Current - Collector Cutoff (Max) :

100nA ICBO

Max Power Dissipation :

300mW

JESD-609 Code :

e1

DC Current Gain (hFE) (Min) @ Ic, Vce :

820 @ 4mA 2V

Package / Case :

SC-74, SOT-457

Lead Free :

Lead Free

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

20V

Emitter Base Voltage (VEBO) :

25V

Gain Bandwidth Product :

35MHz

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Transistor Type :

2 NPN (Dual)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)