IMX2T108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Package / Case :

SC-74, SOT-457

Max Breakdown Voltage :

50V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

10

Current - Collector Cutoff (Max) :

100nA ICBO

Collector Emitter Breakdown Voltage :

50V

VCEsat-Max :

0.4 V

Radiation Hardening :

No

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

HTS Code :

8541.21.00.75

hFE Min :

120

Voltage - Rated DC :

50V

Base Part Number :

*MX2

Max Power Dissipation :

300mW

JESD-609 Code :

e1

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Current Rating :

150mA

Gain Bandwidth Product :

180MHz

ECCN Code :

EAR99

Lead Free :

Lead Free

Number of Pins :

74

Terminal Finish :

TIN SILVER COPPER

Collector Base Voltage (VCBO) :

60V

Published :

2004

Pbfree Code :

yes

Transistor Type :

2 NPN (Dual)

Number of Terminations :

6

Element Configuration :

Dual

Mount :

Surface Mount

Max Collector Current :

150mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

7V

JESD-30 Code :

R-PDSO-G6

Transition Frequency :

180MHz

Pin Count :

6

Collector Emitter Voltage (VCEO) :

50V

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA

Transistor Application :

AMPLIFIER

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Continuous Collector Current :

150mA

Operating Temperature :

150°C TJ