IKW75N60TAFKSA1
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- Mfr.Part #
- IKW75N60TAFKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT TRENCH/FS 600V 80A TO247-3
- Stock
- 23,961
- In Stock ：
- 23,961
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Switching Energy :
- 4.5mJ
- Gate Charge :
- 470nC
- Operating Temperature :
- -40°C~175°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 428W
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 75A
- Current - Collector Pulsed (Icm) :
- 225A
- Reverse Recovery Time :
- 121ns
- Turn Off Time-Nom (toff) :
- 401 ns
- IGBT Type :
- Trench Field Stop
- Package / Case :
- TO-247-3
- Case Connection :
- COLLECTOR
- Surface Mount :
- No
- Published :
- 2014
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Test Condition :
- 400V, 75A, 5 Ω, 15V
- Pbfree Code :
- yes
- Polarity/Channel Type :
- N-Channel
- Packaging :
- Tube
- Series :
- TrenchStop®
- Current - Collector (Ic) (Max) :
- 80A
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Single
- Collector Emitter Voltage (VCEO) :
- 600V
- Turn On Time :
- 69 ns
- Reference Standard :
- AEC-Q101
- Number of Elements :
- 1
- Td (on/off) @ 25°C :
- 33ns/330ns
- Factory Lead Time :
- 14 Weeks
- Transistor Application :
- POWER CONTROL
- Input Type :
- Standard
- Datasheets
- IKW75N60TAFKSA1
IKW75N60TAFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IKW75N60TAFKSA1 Description
The IKW75N60TAFKSA1 is an IGBT in TRENCHSTOP? and Fieldstop technology with a soft, fast recovery anti-parallel Emitter Controlled HE diode.
IKW75N60TAFKSA1 Features
-
Very low VCE(sat) 1.5V (Typ.)
-
Maximum Junction Temperature 175°C
-
Short circuit withstand time 5μs
-
Positive temperature coefficient in VCE(sat)
-
very tight parameter distribution
-
high ruggedness, temperature-stable behaviour
-
very high switching speed
-
Low EMI
-
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
-
Qualified according to JEDEC1) for target applications
-
Pb-free lead plating; RoHS compliant
IKW75N60TAFKSA1 Applications
-
Frequency Converters
-
Uninterrupted Power Supply
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