GT20J341,S4X(S

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - IGBTs - Single

Mounting Style :

Through Hole

Technology :

Si

Minimum Operating Temperature :

- 55 C

Test Condition :

300V, 20A, 33Ohm, 15V

Voltage - Collector Emitter Breakdown (Max) :

600 V

Channel Type :

N

Operating Temperature :

150°C (TJ)

Package / Case :

TO-220-3 Full Pack

Package :

Tube

Product Category :

IGBT Transistors

Collector-Emitter Voltage-Max :

600 V

Maximum Operating Temperature :

+ 150 C

Manufacturer :

Toshiba

Reach Compliance Code :

Unknown

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 20A

Td (on/off) @ 25°C :

60ns/240ns

Operating Temperature (Max) :

150C

Switching Energy :

500μJ (on), 400μJ (off)

Power Dissipation-Max (Abs) :

45 W

Product Status :

Active

Power - Max :

45 W

Current - Collector Pulsed (Icm) :

80 A

Surface Mount :

No

Continuous Collector Current :

20

Gate to Emitter Voltage (Max) :

±25(V)

Brand :

Toshiba

Series :

-

Reverse Recovery Time (trr) :

90 ns

Mounting Type :

Through Hole

Subcategory :

IGBTs

Gate-Emitter Voltage-Max :

25 V

ECCN Code :

EAR99

Power Dissipation :

45

Input Type :

Standard

Operating Temperature Classification :

Military

Package Type :

TO-220SIS

Pin Count :

3 +Tab

Operating Temperature (Min) :

-55C

Collector Current-Max (IC) :

20 A

Mounting :

Through Hole

IGBT Type :

-

Rad Hardened :

No

Collector Current (DC) :

20(A)

RoHS :

Details

Supplier Device Package :

TO-220SIS

Collector Emitter Saturation Voltage :

1.5

Product Type :

IGBT Transistors

Current - Collector (Ic) (Max) :

20 A

Packaging :

Magazine

Configuration :

Single