FMA11AT148

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Operating Supply Voltage :

50V

JESD-609 Code :

e1

Number of Terminations :

5

HTS Code :

8541.21.00.75

Min Operating Temperature :

-55°C

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 10

JESD-30 Code :

R-PDSO-G5

Transistor Type :

2 PNP - Pre-Biased (Dual)

Resistor - Emitter Base (R2) :

47k Ω

Max Collector Current :

100mA

Resistor - Base (R1) :

4.7k Ω

Power Dissipation :

300mW

Voltage - Rated DC :

-50V

Polarity :

PNP

Packaging :

Tape and Reel (TR)

Collector Emitter Breakdown Voltage :

50V

Package / Case :

SC-74A, SOT-753

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Current Rating :

-100mA

Transition Frequency :

250MHz

Number of Elements :

2

Mount :

Surface Mount

hFE Min :

80

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Frequency - Transition :

250MHz

Max Output Current :

100mA

Max Operating Temperature :

150°C

VCEsat-Max :

0.3 V

ECCN Code :

EAR99

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Pin Count :

5

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Max Power Dissipation :

300mW

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

300mV

Terminal Form :

Gull wing

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Published :

2004

Continuous Collector Current :

-100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Time@Peak Reflow Temperature-Max (s) :

10