FMA10AT148

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transistor Type :

2 PNP - Pre-Biased (Dual)

Published :

2001

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 10

Voltage - Rated DC :

-50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 5mA 5V

Max Operating Temperature :

150°C

Continuous Collector Current :

-100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

300mW

Time@Peak Reflow Temperature-Max (s) :

10

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Pbfree Code :

yes

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

50V

Min Operating Temperature :

-55°C

JESD-609 Code :

e1

Pin Count :

5

Max Output Current :

100mA

Collector Emitter Voltage (VCEO) :

300mV

Mount :

Surface Mount

Mounting Type :

Surface Mount

Current Rating :

-100mA

Power Dissipation :

300mW

Number of Pins :

5

RoHS Status :

ROHS3 Compliant

hFE Min :

33

Lead Free :

Lead Free

Transition Frequency :

250MHz

Polarity :

PNP

Current - Collector Cutoff (Max) :

500nA

Number of Terminations :

5

Number of Elements :

2

Terminal Form :

Gull wing

Frequency - Transition :

250MHz

Factory Lead Time :

7 Weeks

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package / Case :

SC-74A, SOT-753

Packaging :

Tape and Reel (TR)

Resistor - Emitter Base (R2) :

10k Ω

Transistor Application :

SWITCHING

VCEsat-Max :

0.3 V

Operating Supply Voltage :

50V

Max Collector Current :

100mA

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Resistor - Base (R1) :

1k Ω

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA